Method of manufacturing a capacitor having improved...

Details Method of manufacturing a capacitor having improved... Method of manufacturing a capacitor having improved...

2007-07-17

2007-07-17

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S243000, C438S244000, C438S386000, C438S387000, C438S396000

Reexamination Certificate

active

11007443

ABSTRACT:
A method for manufacturing a capacitor is disclosed. An etch-stop layer or a polishing stop layer is employed to protect a storage electrode of the capacitor from being damaged by a chemical mechanical polishing process or an etch-back process during its fabrication.

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patent: 1020020021816 (2002-03-01), None
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