Method of forming a semiconductor device using a silicide...

Details Method of forming a semiconductor device using a silicide... Method of forming a semiconductor device using a silicide...

2007-01-30

2007-01-30

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S299000, C438S304000, C438S581000, C438S596000

Reexamination Certificate

active

10950017

ABSTRACT:
Semiconductor devices and methods for fabricating a silicide of a semiconductor device are disclosed. An illustrated method comprises: forming a gate electrode; depositing an insulating layer; removing a predetermined portion of the insulating layer in order to expose a portion of the gate electrode; forming silicide on the exposed portion of the gate electrode; and etching the insulating layer while using the silicide as an etching mask.

REFERENCES:
patent: 6239007 (2001-05-01), Wu
patent: 6326290 (2001-12-01), Chiu
patent: 6383882 (2002-05-01), Lee et al.
patent: 6534405 (2003-03-01), Wu
patent: 6864178 (2005-03-01), Kim

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