Silicon-containing polymer, negative type resist composition...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S910000, C430S325000, C430S280100, C430S914000, C430S316000, C430S330000, C430S327000, C430S313000, C430S328000, C430S311000, C430S945000, C430S921000, C430S925000, C526S279000

Reexamination Certificate

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07129015

ABSTRACT:
A polymer used for a negative type resist composition having a first repeating unit of a Si-containing monomer unit, a second repeating unit having a hydroxy group or an epoxy ring and copolymerized with the first repeating unit is provided. The first repeating unit is represented by the following formula:wherein R1is a hydrogen atom or a methyl group, X is a C1–C4alkyl or alkoxy group, and n is an integer from 2 to 4. Also, there is provided a negative type resist composition including the polymer which is an alkali soluble base polymer, a photoacid generator and a crosslinking agent cross linkable in the presence of an acid.

REFERENCES:
patent: 4551417 (1985-11-01), Suzuki et al.
patent: 5314961 (1994-05-01), Anton et al.
patent: 5674941 (1997-10-01), Cho et al.
patent: 2004/0009436 (2004-01-01), Lee et al.
patent: 2004/0197698 (2004-10-01), Tamaki et al.
patent: 10-142987 (1998-05-01), None
Chem. Abstract—English abstract for JP 10-142987 (Yamaki et al).
Machine-Assisted, partial English translation of JP 10-142987 (Yamaki et al).
Full, formal English translation of JP 10-142987 (Yamaki et al), provided by PTO.

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