Magnetoresistive memory cell array and MRAM memory...

Details Magnetoresistive memory cell array and MRAM memory... Magnetoresistive memory cell array and MRAM memory...

2006-08-22

2006-08-22

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C355S117000

Reexamination Certificate

active

07095648

ABSTRACT:
The present invention describes a matrix with magnetoresistive memory cells arranged in logically organized rows and columns, Each memory cell includes a magnetoresistive element. The matrix comprises means for simultaneously reading from one cell in a column and writing to another cell in a column, or means for simultaneous reading from one cell in a row and writing to another cell in the same row. Such matrix can be used in a read-while-write MRAM memory.

REFERENCES:
patent: 6215707 (2001-04-01), Moyer
patent: 6563743 (2003-05-01), Hanzawa et al.

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