Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2006-12-26
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S250000, C438S778000, C438S438000
Reexamination Certificate
active
07153736
ABSTRACT:
A method of forming a capacitor includes forming first capacitor electrode material over a semiconductor substrate. A silicon nitride comprising layer is formed over the first capacitor electrode material. The semiconductor substrate with silicon nitride comprising layer is provided within a chamber. An oxygen comprising plasma is generated remote from the chamber. The remote plasma generated oxygen is fed to the semiconductor substrate within the chamber at a substrate temperature of no greater than 750° C. effective to form a silicon oxide comprising layer over the silicon nitride comprising layer. After the feeding, a second capacitor electrode material is formed over the silicon oxide comprising layer. Methods of forming capacitor dielectric layers are also disclosed.
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L. K
Beaman Kevin L.
Eppich Denise M.
Micro)n Technology, Inc.
Nguyen Tuan H.
Wells St. John P.S.
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