Method of forming integrated circuit contacts

Details Method of forming integrated circuit contacts Method of forming integrated circuit contacts

2006-08-08

2006-08-08

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S256000, C438S381000

Reexamination Certificate

active

07087479

ABSTRACT:
Contacts are formed to integrated circuit devices by first forming a conductive layer (80) on a semiconductor device. An optional dielectric layer (130) is formed over the conductive layer and a carbon containing dielectric layer (140) is formed over the optional dielectric layer (130). Contacts are formed to the conductive layer (80) by etching openings in the carbon containing dielectric layer (140) and the optional dielectric layer (130).

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