Semiconductor manufacturing method and semiconductor device

Details Semiconductor manufacturing method and semiconductor device Semiconductor manufacturing method and semiconductor device

2006-10-03

2006-10-03

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S563000, C257SE29262, C257SE21629, C257SE21468

Reexamination Certificate

active

07115476

ABSTRACT:
A method of manufacturing a semiconductor device includes forming a mask layer on a semiconductor substrate, etching the semiconductor substrate using the mask layer as a mask, thereby forming a semiconductor pillar, doping an impurity into the semiconductor substrate, thereby forming a first source/drain region in part of the semiconductor substrate, which is located under the semiconductor pillar, forming a gate insulating film on the semiconductor substrate, which contacts a side surface of the semiconductor pillar, forming a gate electrode on a side surface of the gate insulating film, forming a first insulating layer on the gate electrode, which contacts a side surface of the semiconductor pillar, and doping the impurity into the first insulating layer, thereby forming a second source/drain region in part of the semiconductor pillar, which is located on a side surface of the first insulating layer.

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