Planarizing a semiconductor structure to form replacement...

Details Planarizing a semiconductor structure to form replacement... Planarizing a semiconductor structure to form replacement...

2006-11-21

2006-11-21

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

Reexamination Certificate

active

07138323

ABSTRACT:
A sacrificial gate structure, including nitride and fill layers, may be replaced with a metal gate electrode. The metal gate electrode may again be covered with a nitride layer covered by a fill layer. The replacement of the nitride and fill layers may reintroduce strain and provide an etch stop.

REFERENCES:
patent: 6171910 (2001-01-01), Hobbs et al.
patent: 2005/0236694 (2005-10-01), Wu et al.

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