Material for contact etch layer to enhance device performance

Details Material for contact etch layer to enhance device performance Material for contact etch layer to enhance device performance

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S789000, C438S790000, C438S793000, C438S794000

Reexamination Certificate

active

07001844

ABSTRACT:
Stress level of a nitride film is adjusted as a function of two or more of the following: identity of a starting material precursor used to make the nitride film; identity of a nitrogen-containing precursor with which is treated the starting material precursor; ratio of the starting material precursor to the nitrogen-containing precursor; a set of CVD conditions under which the film is grown; and/or a thickness to which the film is grown. A rapid thermal chemical vapor deposition (RTCVD) film produced by reacting a compound containing silicon, nitrogen and carbon (such as bis-tertiary butyl amino silane (BTBAS)) with NH3can provide advantageous properties, such as high stress and excellent performance in an etch-stop application. An ammonia-treated BTBAS film is particularly excellent in providing a high-stress property, and further having maintainability of that high-stress property over repeated annealing.

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