Semiconductor memory device having repair circuit

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S185110

Reexamination Certificate

active

07099209

ABSTRACT:
A semiconductor memory device, including: a plurality of banks each of which includes a plurality of memory cells, a plurality of redundancy memory cells for replacing a defective memory cell and a repair circuit, having a plurality of fuse sets, for substituting an address to thereby access the redundancy memory cell instead of the defective memory cell; and a common repair circuit, having a plurality of fuse sets, for substituting the address in order to replace the defective memory cell with the redundancy memory cell included in any of the plurality of banks.

REFERENCES:
patent: 5430679 (1995-07-01), Hiltebeitel et al.
patent: 5491664 (1996-02-01), Phelan
patent: 5822257 (1998-10-01), Ogawa
patent: 5970000 (1999-10-01), Kirihata et al.
patent: 6144593 (2000-11-01), Cowles et al.
patent: 6914814 (2005-07-01), Im et al.
patent: 2005/0243617 (2005-11-01), Kang
patent: 1020010057382 (2001-04-01), None
patent: 100300037 (2001-06-01), None

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