Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2006-08-29
2006-08-29
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S185110
Reexamination Certificate
active
07099209
ABSTRACT:
A semiconductor memory device, including: a plurality of banks each of which includes a plurality of memory cells, a plurality of redundancy memory cells for replacing a defective memory cell and a repair circuit, having a plurality of fuse sets, for substituting an address to thereby access the redundancy memory cell instead of the defective memory cell; and a common repair circuit, having a plurality of fuse sets, for substituting the address in order to replace the defective memory cell with the redundancy memory cell included in any of the plurality of banks.
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Cho Ho-Youb
Ha Sung-Joo
Kang Sang-Hee
Dinh Son T.
Hynix / Semiconductor Inc.
Mayer, Brown, Rowe and Maw LLP
Sofocleous Alexander
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