Method for fabricating a self-aligning mask

Details Method for fabricating a self-aligning mask Method for fabricating a self-aligning mask

2006-10-24

2006-10-24

Pham, Thanhha (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S694000

Reexamination Certificate

active

07125778

ABSTRACT:
A description is given of a method for a selective masking of a structure with a small structure surface with respect to a structure with a larger structure surface. To that end, the structures are filled with a covering layer. The covering layer is formed with a larger thickness above the first structure, which has the larger structure surface, than above the second structure. Afterward, the covering layer is removed by a homogeneous removal method, so that first the structure surface of the second structure is uncovered. A simple self-aligning method for fabricating a mask for uncovering the second structure is thus provided.

REFERENCES:
patent: 5731239 (1998-03-01), Wong et al.
patent: 6048775 (2000-04-01), Yao et al.
patent: 6057210 (2000-05-01), Yang et al.
patent: 6159822 (2000-12-01), Yang et al.
patent: 6207538 (2001-03-01), Pan et al.
patent: 6261957 (2001-07-01), Jang et al.
patent: 6270353 (2001-08-01), Andrews et al.
patent: 6326309 (2001-12-01), Hatanaka et al.
patent: 6372605 (2002-04-01), Kuehne et al.
patent: 195 48 058 (1997-06-01), None
patent: 380298 (1987-07-01), None
D.R. Cote et al.: “Plasma-assisted chemical vapor deposition of dielectric thin films for ULSI semiconductor circuits”,IBM J. Res. Develop., vol. 43, No. ½, Jan./Mar. 1999, pp. 5-38.
Stanley Wolf et al.: “Silicon Processing for the VLSI Era: Process Technology”, 2nd. ed., Oct. 1999, pp. 795-797.

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