Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2006-10-31

2006-10-31

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S386000

Reexamination Certificate

active

07129132

ABSTRACT:
Hexachlorodisilane (Si2Cl6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.

REFERENCES:
patent: 4481070 (1984-11-01), Thomas et al.
patent: 4810673 (1989-03-01), Freeman
patent: 5176789 (1993-01-01), Yamazaki et al.
patent: 5837577 (1998-11-01), Cherng
patent: 6207991 (2001-03-01), Rahim
patent: 6258690 (2001-07-01), Zenke
patent: 6326658 (2001-12-01), Tsunashima et al.
patent: 6559486 (2003-05-01), Ueda
patent: 6849872 (2005-02-01), Yamazaki et al.
patent: 6887746 (2005-05-01), Yamazaki et al.
patent: 5-29301 (1993-02-01), None
patent: 2795904 (1998-06-01), None
Toshiba Corp. et al., “Low Temperature-, High Deposition Rate CVD SiN Utilizing Hexachlorodislane”, The 46thSpring Mtg., 1999, The Japan Society of Applied Physics and Related Societies, 30p-ZQ-3-3, (Mar. 1999).
Taylor, R.C. et al., “LPCVD of Silicon Nitride Films From Hexachlorodislane and Ammonia”, Mat. Res. Soc. Symp. Proc., vol. 105, pp. 319-325, (1988).
Tanaka, M. et al., “Low-k SiN Film for CU Interconnects Integration Fabricated by Ultra Low Temperatures Thermal CVD”, VLSI Technology Symposium, (Jun. 1999).

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3683643