Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-06-06

2006-06-06

Deo, Duy-Vu N. (Department: 1765)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S345000, C257S346000, C257S401000, C438S301000, C438S302000, C438S303000

Reexamination Certificate

active

07057236

ABSTRACT:
After forming a gate electrode on a semiconductor substrate, ion implantation is performed on the semiconductor substrate by using the gate electrode as a mask to form low concentration impurity regions, and thereafter first sidewall insulating films are formed on the side surfaces of the gate electrode. Next, by using the gate electrode and the first sidewall insulating films as a mask, ion implantation is performed on the semiconductor substrate to form high concentration impurity regions, and thereafter second sidewall insulating films are formed on the side surfaces of the first sidewall insulating films. After that, by using each sidewall insulating film as a mask, metal silicide layers are selectively formed on each surface of the semiconductor substrate and the gate electrode.

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