Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2006-10-03

2006-10-03

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S396000, C438S760000, C438S761000, C438S778000

Reexamination Certificate

active

07115468

ABSTRACT:
A semiconductor device and a fabricating method for the same are disclosed, in which when forming a capacitor sacrificial film pattern, even if a misalignment occurs, the degradation of the dielectric property due to a direct contact between the contact plug and the dielectric medium can be prevented. The semiconductor device includes a connecting part connected through an insulating layer of a substrate to a conductive layer, a seed separating layer formed around the connecting part and the insulating layer to provide an open region exposing at least part of the connecting part, a seed layer filled into the open region of the seed separating layer and a capacitor. The capacitor includes of a lower electrode formed upon the seed layer, a dielectric medium formed upon the lower electrode, and an upper electrode formed upon the dielectric medium.

REFERENCES:
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 6051859 (2000-04-01), Hosotani et al.
patent: 6066528 (2000-05-01), Fazan et al.
patent: 6297122 (2001-10-01), Eguchi et al.
patent: 6500750 (2002-12-01), Shroff et al.
patent: 2002/0004293 (2002-01-01), Soininen et al.
patent: 2004/0235255 (2004-11-01), Tanaka et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3679084