Methods of fabricating semiconductor devices

Details Methods of fabricating semiconductor devices Methods of fabricating semiconductor devices

2006-12-19

2006-12-19

Lindsay, Jr., Walter L. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S300000, C438S301000

Reexamination Certificate

active

07151032

ABSTRACT:
Methods of fabricating a semiconductor devices are disclosed. One example method includes forming a gate insulating layer and a gate electrode on a semiconductor substrate; forming first halo implant regions under the gate electrode in the semiconductor substrate by implanting first conduction type impurities; forming low concentration impurity regions for LDD regions under sides of the gate electrode in the semiconductor substrate by implanting second conduction type impurities at a low concentration; forming second halo implant regions under sides of the gate electrode in the semiconductor substrate by implanting first conduction type impurities; forming high concentration impurity regions for source/drain regions in the semiconductor substrate by implanting second conduction type impurities; and forming junction compensation ion regions between the high concentration impurity regions and the second halo implant regions by implanting first conduction type impurities.

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