Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S301000
Reexamination Certificate
active
07084451
ABSTRACT:
A method for forming a trench capacitor. The method includes forming a trench in a semiconductor substrate. A conformal layer of semiconductor material is deposited in the trench. The surface of the conformal layer of semiconductor material is roughened. An insulator layer is formed outwardly from the roughened, conformal layer of semiconductor material. A polycrystalline semiconductor plate is formed outwardly from the insulator layer in the trench.
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Ahn Kie Y.
Forbes Leonard
Geusic Joseph E.
Lee Eugene
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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