Semiconductor chip production method, semiconductor device...

Details Semiconductor chip production method, semiconductor device... Semiconductor chip production method, semiconductor device...

2006-10-17

2006-10-17

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S620000, C438S667000

Reexamination Certificate

active

07122457

ABSTRACT:
A semiconductor chip production method including the steps of: forming a front side recess in a semiconductor substrate; depositing a metal material in the front side recess to form a front side electrode electrically connected to a functional device formed on the front surface; removing a rear surface portion of the semiconductor substrate to reduce the thickness of the semiconductor substrate to a thickness greater than the depth of the front side recess; forming a rear side recess communicating with the front side recess in the rear surface of the semiconductor substrate after the thickness reducing step; and depositing a metal material in the rear side recess to form a rear side electrode electrically connected to the front side electrode for formation of a through-electrode.

REFERENCES:
patent: 5229647 (1993-07-01), Gnadinger
patent: 5627106 (1997-05-01), Hsu
patent: 6841883 (2005-01-01), Farnworth et al.
patent: WO 98/19337 (1998-05-01), None

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