Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2006-06-13

2006-06-13

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000, C438S525000

Reexamination Certificate

active

07060578

ABSTRACT:
An impurity having a conductivity type same as that contained in a source-and-drain region is implanted to an exposed surface of a gate electrode along a direction inclined to the surface of said semiconductor substrate, while using over-etched sidewalls as a mask, where the gate electrode is implanted both at the top surface and the upper portion of one side face thereof, whereas one of the source-and-drain regions is implanted with the impurity in an amount possibly attained by a single implantation, but the other portion is not implanted or only slightly implanted to a less affective degree.

REFERENCES:
patent: 4962054 (1990-10-01), Shikata
patent: 6194278 (2001-02-01), Rengarajan
patent: 6413843 (2002-07-01), Hara
patent: 6458665 (2002-10-01), Kim
patent: 6458666 (2002-10-01), Wasshuber

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