Memory resistance film with controlled oxygen content

Details Memory resistance film with controlled oxygen content Memory resistance film with controlled oxygen content

2006-12-12

2006-12-12

Smith, Bradley K. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27006

Reexamination Certificate

active

07148533

ABSTRACT:
A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE1-xAExMnOy, where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE1-xAExMnOyregion where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region.

REFERENCES:
patent: 6870755 (2005-03-01), Rinerson et al.
patent: 2004/0160817 (2004-08-01), Rinerson et al.

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