Atomic layer deposited lanthanide doped TiOx dielectric films

Details Atomic layer deposited lanthanide doped TiOx dielectric films Atomic layer deposited lanthanide doped TiOx dielectric films

2006-08-01

2006-08-01

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S240000

Reexamination Certificate

active

07084078

ABSTRACT:
A dielectric film containing atomic layer deposited lanthanide doped TiOxand a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lanthanide doped TiOxdielectric layer is formed by depositing titanium and oxygen onto a substrate surface by atomic layer deposition, and depositing a lanthanide dopant by atomic layer deposition onto the substrate surface containing the deposited titanium and oxygen. The dopant can be selected from a group consisting of Nd, Tb, and Dy. Dielectric films containing atomic layer deposited lanthanide doped TiOxare thermodynamically stable such that the lanthanide doped TiOxwill have minimal reactions with a silicon substrate or other structures during processing.

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