Semiconductor device with reduced memory leakage current

Details Semiconductor device with reduced memory leakage current Semiconductor device with reduced memory leakage current

2006-08-22

2006-08-22

Nguyen, Cuong (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

07095074

ABSTRACT:
Defects in element forming regions on which memory cells of a non-volatile memory are formed are to be diminished to reduce leakage current. End portions of element forming regions with non-volatile memory cells formed thereon are extended a length D by utilizing the region which underlies a dummy conductive film, whereby a stress induced from an insulating film which surrounds the element forming regions is concentrated on the extended region. As a result, defects do not extend up to the regions where memory cells are formed and therefore it is possible to reduce leakage current in the memory cells.

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Kim et al., “A Novel 4.6F2NOR Cell Technology With Lightly Doped Source (LDS) Junction For High Density Flash Memories,” IEDM (International Electron Devices Meeting), 1998, pp. 979-982.

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