Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Containing germanium – ge
Reexamination Certificate
2006-10-31
2006-10-31
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Including semiconductor material other than silicon or...
Containing germanium, ge
C257S019000, C257S192000, C257S412000, C257SE21198, C257SE21205
Reexamination Certificate
active
07129564
ABSTRACT:
The structure and method of forming a notched gate MOSFET disclosed herein addresses such problems as device reliability. A gate dielectric (e.g. gate oxide) is formed on the surface of an active area on the semiconductor substrate, preferably defined by an isolation trench region. A layer of polysilicon is then deposited on the gate dielectric. This step is followed by depositing a layer of silicon germanium) (SiGe). The sidewalls of the polysilicon layer are then laterally etched, selective to the SiGe layer to create a notched gate conductor structure, with the SiGe layer being broader than the underlying polysilicon layer. Sidewall spacers are preferably formed on sidewalls of the SiGe layer and the polysilicon layer. A silicide layer is preferably formed as a self-aligned silicide from a polysilicon layer deposited over the SiGe layer, to reduce resistance of the gate conductor. One or more other processing steps (e.g. source and drain implants, extension implants, and pocket lightly doped drain (LDD) implants), gate conductor stack doping, and silicidation are preferably performed in completing the transistor.
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Beintner Jochen
Li Yu-jun
Moumen Naim
Wrschka Porshia Shane
Capella Steven
Diaz José R.
Parker Kenneth
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