Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Tsai, H. Jey (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S302000, C257SE27155
Reexamination Certificate
active
07141846
ABSTRACT:
There is disclosed a semiconductor storage device comprising a trench capacitor wherein a high dielectric-constant insulator is used and formation of a depletion layer in a capacitor electrode is suppressed. The semiconductor storage device comprises a trench formed in a semiconductor substrate, a high dielectric-constant insulator formed on an inner wall of the trench, a first electrode formed in the semiconductor substrate contacting with the high dielectric-constant insulator and containing dopants to provide conductivity, a second electrode formed to fill the trench and containing the same dopants at least at the same concentration as in the first electrode, and a trench capacitor which includes the first electrode, the high dielectric-constant insulator and the second electrode and in which a depletion layer capacitance ratio (C/C0) is 0.9 or more during an operation.
REFERENCES:
patent: 5225698 (1993-07-01), Kim et al.
patent: 6355519 (2002-03-01), Lee
patent: 6664583 (2003-12-01), Yang et al.
patent: 6780704 (2004-08-01), Raaijmakers et al.
patent: 2001-200363 (2001-07-01), None
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tsai H. Jey
LandOfFree
Semiconductor storage device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3650167