Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-10
2006-10-10
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S315000
Reexamination Certificate
active
07118962
ABSTRACT:
The present invention discloses a nonvolatile memory device which can improve the data storage capacity without increasing the surface area of the device, and a method for manufacturing the same.The nonvolatile memory device comprises: a gate of a stack type structure formed on an active region of a semiconductor substrate; a source/drain formed in the substrate at both sides of the gate of the stack type structure; an interlayer insulating film formed on the substrate where the source/drain is formed and covering the gate of the stack type structure; a contact connected to the source/drain through the interlayer insulating film; a plurality of conductive patterns formed in the interlayer insulating film of the region not adjacent to the contact; and an electrode pad formed on the conductive patterns.
REFERENCES:
patent: 6020229 (2000-02-01), Yamane et al.
patent: 6078521 (2000-06-01), Madurawe et al.
patent: 6380585 (2002-04-01), Odanaka et al.
patent: 6627943 (2003-09-01), Shin et al.
Baumeister B. William
Farahani Dana
Magnachip Semiconductor Ltd.
Marshall & Gerstein & Borun LLP
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