Semiconductor memory device allowing increase in capacity...

Details Semiconductor memory device allowing increase in capacity... Semiconductor memory device allowing increase in capacity...

2006-02-28

2006-02-28

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S189070

Reexamination Certificate

active

07006391

ABSTRACT:
A column select gate of a semiconductor memory device includes read gate circuits. Each read gate circuit includes read gate transistors. Each read gate transistor connects a read column select line to a global I/O line pair in response to a potential level on a bit line pair received on its gate and the potential on the read column select line. A voltage drop caused on one of the paired global I/O lines by turn-on of the read gate transistor is amplified by a main read amplifier to obtain read data.

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“Ultra LSI Memory”, Kiyoo ITO, Advanced Electronics Series, I-9, BAIFUKAN, Nov. 5, 1994, pp. 165-167 and pp. 333-341 (with English commentary).
“Ultra LSI Memory”, Kiyoo ITO, Advanced Electronics Series, I-9, BAIFUKAN, Nov. 5, 1994, pp. 165-169 and pp. 181-183 (with partial translations).

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