Structure of a semiconductor integrated circuit and method...

Details Structure of a semiconductor integrated circuit and method... Structure of a semiconductor integrated circuit and method...

2006-02-07

2006-02-07

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S153000, C438S154000, C438S202000, C438S203000, C438S228000, C438S311000

Reexamination Certificate

active

06995055

ABSTRACT:
A method of fabricating CMOS transistors of first and second conductivity types in an SOI substrate includes the steps of etching contact holes and alignment marks through the semiconductor and insulating films and into the support substrate of an SOI substrate, forming a thermal oxide film on the semiconductor layer inside the contact holes, forming back regions of the CMOS transistors in the substrate, forming a well regions of the CMOS transistors in the semiconductor film, forming a gate oxide film, gate electrodes, source regions, drain regions, and body regions, forming an interlayer insulating film, forming contacts of the source regions, drain regions, and body regions, forming openings in the interlayer insulating film over the contact holes, and forming wiring on the interlayer insulating film.

REFERENCES:
patent: 5620922 (1997-04-01), Yoshida et al.
patent: 5882965 (1999-03-01), Schwalke et al.
patent: 6368936 (2002-04-01), Yoshida
patent: 6440802 (2002-08-01), Hayashi et al.
patent: 6451633 (2002-09-01), Yoshida
patent: 6740551 (2004-05-01), Yoshida et al.
patent: 2003/0054594 (2003-03-01), Yoshida et al.

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