Method using specific contact angle for immersion lithography

Details Method using specific contact angle for immersion lithography Method using specific contact angle for immersion lithography

2006-10-10

2006-10-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Miscellaneous

C359S245000

Reexamination Certificate

active

07119035

ABSTRACT:
A method for performing immersion lithography on a semiconductor wafer is disclosed. The method includes positioning the semiconductor wafer beneath a lens and applying a fluid between a top surface of the semiconductor wafer and the lens. An additive can be provided to the top surface so that any droplet of the fluid that forms on the top surface of the semiconductor wafer will have a contact angle between about 40° and about 80°.

REFERENCES:
patent: 5908705 (1999-06-01), Nguyen et al.
patent: 6665127 (2003-12-01), Bao et al.
patent: 2005/0026076 (2005-02-01), Lee
Duck-Jung Lee et al., “Effects Of A Hydrophilic Surface In Anodic Bonding”, Oct. 4, 2004, 1 page, www.iop.org/EJ/abstract/0960-1317/9/4/305, Journal of Micromechanics and Microengineering.

Affiliated with

Also associated with

Rating

Method using specific contact angle for immersion lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method using specific contact angle for immersion lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method using specific contact angle for immersion lithography will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3642310