Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Bad bit

Reexamination Certificate

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C365S189120, C365S211000

Reexamination Certificate

active

07136313

ABSTRACT:
To provide a semiconductor storage device which can adapt to assembly processes involving different treatment temperatures, can become unrewritable when rewriting of data by the user is prohibited, negates the necessity for developing different semiconductor storage devices, and lowers development cost.A semiconductor storage device is provided with, as areas for storing faulty address information indicating a faulty area and operation mode setting information about the semiconductor storage device, a first setting function storage area103formed from electrically-rewritable nonvolatile memory and a second setting function storage area102formed from once-rewritable nonvolatile memory. Transfer of faulty address information to a faulty address register111and transfer of operation mode setting information to an operation mode register110are selectively performed.

REFERENCES:
patent: 6438029 (2002-08-01), Hiraki et al.
patent: 6462995 (2002-10-01), Urakawa
patent: 6563732 (2003-05-01), Matarrese et al.
patent: 6611458 (2003-08-01), Ishibashi et al.
patent: 6781893 (2004-08-01), Hiraki et al.
patent: 7054207 (2006-05-01), Keeth et al.
patent: 2003/0014688 (2003-01-01), Wu
patent: 2002-117692 (2002-04-01), None

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