Enhanced surface area capacitor fabrication methods

Details Enhanced surface area capacitor fabrication methods Enhanced surface area capacitor fabrication methods

2006-05-30

2006-05-30

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S308000, C257S309000, C257S532000

Reexamination Certificate

active

07053432

ABSTRACT:
A capacitor fabrication method may include forming a first capacitor electrode over a substrate and atomic layer depositing an insulative barrier layer to oxygen diffusion over the first electrode. A capacitor dielectric layer may be formed over the first electrode and a second capacitor electrode may be formed over the dielectric layer. The barrier layer may include Al2O3. A capacitor fabrication method may also include forming a first capacitor electrode over a substrate, chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode, and chemisorbing a layer of a second precursor at least one monolayer thick on the first precursor layer. A chemisorption product of the first and second precursors may be comprised by a layer of an insulative barrier material. The first precursor may include H2O and the second precursor may include trimethyl aluminum.

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