Method of making flexibly partitioned metal line segments for a

Details Method of making flexibly partitioned metal line segments for a Method of making flexibly partitioned metal line segments for a

1998-09-23

2000-03-07

Thomas, Tom

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438598, H01L 218247

Patent

active

060339551

ABSTRACT:
A method of forming flexibly partitioned metal line segments 10 and 12 for separate memory banks in a simultaneous operation flash memory device with a flexible bank partition architecture comprises the steps of providing a basic metal layer 2 comprising a plurality of basic metal layer segments 2a, 2b, 2c, . . . 2j separated by a plurality of gaps 6a, 6b, 6c, . . . 6i, each of the gaps having a predefined gap interval length, and providing a metal option layer 8 comprising a plurality of metal option layer segments on the basic metal layer 2, the metal option layer segments overlapping the gaps between the basic metal layer segments but leaving one of the gaps open, to form the metal line segments for the separate memory banks.

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