Calibration method and memory system

Electrical computers and digital processing systems: support – Synchronization of clock or timing signals – data – or pulses

Reexamination Certificate

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Details

C713S401000, C713S500000, C713S501000, C713S502000, C713S503000

Reexamination Certificate

active

07043652

ABSTRACT:
In a memory system having a memory controller20and at least one DRAM30, the memory controller20receives a continuous and alternate inversion signal as a pseudo clock signal from the DRAM30, and generates an internal reception clock signal for a DQ signal on the basis of the continuous and alternate inversion signal and a base clock signal. Then, the memory controller20counts the number of the receiving internal clocks from the moment an OUT1 command is issued to the DRAM30until a high-level data signal is received as the DQ data signal from the DRAM30, and retains the count result as the number of delay clocks. Thus, the memory controller20can receive read data (DQ signal) on the basis of the internal reception clock signal when time equivalent to the number of the delay clocks passes after the read command is issued.

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Japanese Office Action dated Sep. 22, 2004.
SLDRAM Inc. SLD4M18DR400 4 MEG X 18 SLDRAM Datasheet. 1998, p. 1-14.

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