Solid phase epitaxy recrystallization by laser annealing

Details Solid phase epitaxy recrystallization by laser annealing Solid phase epitaxy recrystallization by laser annealing

2006-10-10

2006-10-10

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S530000

Reexamination Certificate

active

07118980

ABSTRACT:
Methods (70) are described for fabricating shallow and abrupt gradient drain extensions for MOS type transistors, in which a solid phase epitaxial recrystallization is performed within the drain extensions utilizing a laser SPER annealing process in the manufacture of semiconductor products. One method (70) includes a preamorphizing process (74) of implanting a heavy ion species such as Germanium deep into an extension region of a substrate adjacent a channel region of the substrate to form a deep amorphized region, then implanting boron or another such dopant species into an extension region of the substrate adjacent the channel region. The implanted dopant is then preannealed (78) at a low temperature to set the junction depth and doping concentration. The extensions and/or the deep source/drain regions are subsequently annealed (84) with a laser at a high temperature providing a solid phase epitaxial recrystallization in the regions proximate the channel region to achieve ultra high doping concentrations and activation levels with an abrupt gradient.

REFERENCES:
patent: 6300208 (2001-10-01), Talwar et al.
patent: 6391731 (2002-05-01), Chong et al.

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