Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-31
2006-10-31
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S295000, C438S297000, C438S407000, C438S528000, C438S928000, C257SE21563
Reexamination Certificate
active
07129138
ABSTRACT:
Enhanced silicon-on-insulator (SOI) buried oxide (BOX) structures and methods are provided for implementing enhanced SOI BOX structures. An oxygen implant step is performed from a backside into a thinned silicon substrate layer. An anneal step forms thick buried oxide (BOX) regions from oxygen implants in the silicon substrate layer. The oxygen implant step forms an isolated region near the oxygen implants. A backside implant step selectively dopes the isolated region for forming a backgate for an SOI device being formed including a selected one of anti-fuse (AF) devices, and SOI transistors including PFET and NFET devices.
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Furukawa Toshiharu
Radens Carl John
Tonti William Robert
Williams Richard Quimby
Fourson George
International Business Machines - Corporation
Pennington Joan
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