Formation of capacitor having a Fin structure

Details Formation of capacitor having a Fin structure Formation of capacitor having a Fin structure

2006-06-13

2006-06-13

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S386000

Reexamination Certificate

active

07060553

ABSTRACT:
Device designs and methods are described for incorporating capacitors commonly used in planar CMOS technology into a FinFET based technology. A capacitor includes at least one single-crystal Fin structure having a top surface and a first side surface opposite a second side surface. Adjacent the top surface of the at least one Fin structure is at least one insulator structure. Adjacent the at least one insulator structure and over a portion of the at least one Fin structure is at least one conductor structure. Decoupling capacitors may be formed at the circuit device level using simple design changes within the same integration method, thereby allowing any number, combination, and/or type of decoupling capacitors to be fabricated easily along with other devices on the same substrate to provide effective decoupling capacitance in an area-efficient manner with superior high-frequency response.

REFERENCES:
patent: RE32090 (1986-03-01), Jaccodine et al.
patent: 4704368 (1987-11-01), Goth et al.
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5105245 (1992-04-01), Riemenschneider et al.
patent: 5225363 (1993-07-01), Riemenschneider et al.
patent: 5566051 (1996-10-01), Burns
patent: 5573967 (1996-11-01), Tseng
patent: 5619067 (1997-04-01), Sua et al.
patent: 5786985 (1998-07-01), Taniguchi et al.
patent: 5869859 (1999-02-01), Hanagasaki
patent: 5898982 (1999-05-01), Metzler et al.
patent: 5902126 (1999-05-01), Hong et al.
patent: 5956236 (1999-09-01), Corisis et al.
patent: 5976960 (1999-11-01), Cheffings
patent: 5995378 (1999-11-01), Farnsworth et al.
patent: 6037620 (2000-03-01), Hoenigschmid et al.
patent: 6080615 (2000-06-01), Lee et al.
patent: 6087226 (2000-07-01), Kim et al.
patent: 6121651 (2000-09-01), Furukawa et al.
patent: 6140214 (2000-10-01), Violette et al.
patent: 6291847 (2001-09-01), Ohyu et al.
patent: 6309945 (2001-10-01), Sato et al.
patent: 6320237 (2001-11-01), Assaderaghi et al.
“FinFet Process Demonstration, Deliverable Report: Test Chip and Process Design”, King, et al., Task ID. 850.002.

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