Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-09-05
2006-09-05
Cuneo, Kamand (Department: 2827)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S653000, C438S654000, C438S656000, C438S680000, C438S642000, C438S643000, C438S648000, C438S761000, C438S763000, C427S099300, C427S124000, C427S304000, C427S225000, C427S255380, C427S225000, C427S225000, C427S255700
Reexamination Certificate
active
07101795
ABSTRACT:
A method and system to form a refractory metal layer on a substrate features nucleating a substrate using sequential deposition techniques in which the substrate is serially exposed to first and second reactive gases followed by forming a layer, employing vapor deposition, to subject the nucleation layer to a bulk deposition of a compound contained in one of the first and second reactive gases.
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Kori Moris
Lai Ken Kaung
Littau Karl A.
Lu Xinliang
Mak Alfred W.
Applied Materials Inc.
Cuneo Kamand
Patterson & Sheridan LLP
Zarneke David A.
LandOfFree
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