Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-21
2006-03-21
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S266000
Reexamination Certificate
active
07015099
ABSTRACT:
A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.
REFERENCES:
patent: 6057580 (2000-05-01), Watanabe et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6376877 (2002-04-01), Yu et al.
patent: 6391722 (2002-05-01), Koh
patent: 6417047 (2002-07-01), Isobe
patent: 6448606 (2002-09-01), Yu et al.
patent: 6620681 (2003-09-01), Kim et al.
patent: 6878588 (2005-04-01), Dong et al.
patent: 2002/0068398 (2002-06-01), Dong et al.
patent: 2003/0119256 (2003-06-01), Dong et al.
patent: 2003/0119259 (2003-06-01), Jeong et al.
patent: 2003/0119263 (2003-06-01), Lee et al.
patent: 2003-0053314 (2003-06-01), None
patent: 2003-0053315 (2003-06-01), None
Ahn Jung Ryul
Jung Sung Mun
Kim Jum Soo
Lee Young Bok
Shin Young Ki
Chen Jack
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
LandOfFree
Method of manufacturing a flash memory cell capable of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a flash memory cell capable of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a flash memory cell capable of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3608546