Lanthanide oxide dielectric layer

Details Lanthanide oxide dielectric layer Lanthanide oxide dielectric layer

2006-07-25

2006-07-25

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S686000, C427S096100, C427S096800

Reexamination Certificate

active

07081421

ABSTRACT:
A ruthenium gate for a lanthanide oxide dielectric layer and a method of fabricating such a combination gate and dielectric layer produce a reliable structure for use in a variety of electronic devices. The lanthanide oxide dielectric layer is formed by depositing lanthanum by atomic layer deposition onto a substrate surface using a trisethylcyclopentadionatolanthanum precursor or a trisdipyvaloylmethanatolanthanum precursor. A ruthenium or a conductive ruthenium oxide gate may be formed on the lanthanide oxide dielectric layer. A ruthenium gate on a lanthanide oxide dielectric layer provides a gate structure that effectively prevents a reaction between the gate and the lanthanide oxide dielectric layer.

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