Method of manufacturing a semiconductor device using a spacer

Details Method of manufacturing a semiconductor device using a spacer Method of manufacturing a semiconductor device using a spacer

1995-06-05

1997-04-15

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438556, 438586, H01L 218234

Patent

active

056209126

ABSTRACT:
A semiconductor device and manufacturing method wherein a gate insulating film is formed on a semiconductor substrate. A gate is formed on the gate insulating film and a sidewall spacer is formed on respective sides of the gate. The substrate is etched at the respective sides of the gate to form respective recessed parts of the substrate. An insulating film is provided on the recessed parts of the substrate and the recessed parts are filled with a semiconductor layer. Impurity regions are formed contacting the semiconductor layer in the semiconductor substrate on the respective sides of the gate.

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patent: 5116768 (1992-05-01), Kawamura
patent: 5188973 (1993-02-01), Omura et al.
patent: 5191397 (1993-03-01), Yoshida
Wolf et al., "Silicon Processing for the VLSI", pp. 529-532, 1986, vol. 1.

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