Method for manufacturing flash memory device

Details Method for manufacturing flash memory device Method for manufacturing flash memory device

2006-01-17

2006-01-17

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000, C438S261000, C438S201000

Reexamination Certificate

active

06987046

ABSTRACT:
The present invention discloses a method for manufacturing a flash memory device including the steps of: sequentially forming a first polysilicon film for a floating gate electrode, a first oxide film, a polysilicon film for a hard mask and a second oxide film on a semiconductor substrate; etching and patterning the second oxide film and the polysilicon film for the hard mask, by forming photoresist patterns on a predetermined region of the second oxide film, and removing the photoresist patterns; forming spacers on the sidewalls of the polysilicon film for the hard mask, by forming and etching a polysilicon film for forming spacers on the whole surface of the resulting structure; removing the exposed first oxide film and a predetermined thickness of second oxide film formed on the patterned polysilicon film for the hard mask; forming floating gate electrode patterns by performing first and second etching processes by using the patterned polysilicon film for the hard mask and the spacers as an etch mask; performing a cleaning process on the whole surface of the resulting structure, and removing the residual second oxide film at the same time; and forming control gate electrode patterns, by sequentially forming and patterning an ONO film, a second polysilicon film for a control gate electrode, a metal silicide film and a hard mask on the resulting structure on which the floating gate electrode patterns have been formed.

REFERENCES:
patent: 6784054 (2004-08-01), Nitta et al.
patent: 6882003 (2005-04-01), Prall et al.

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