Method of making a semiconductor device with recessed source and

Details Method of making a semiconductor device with recessed source and Method of making a semiconductor device with recessed source and

1997-04-01

1998-08-25

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438307, 438303, 438308, H01L 21336

Patent

active

057982910

ABSTRACT:
This invention relates to a semiconductor device and method for fabricating the semiconductor device, for forming a source and drain structure having no side diffusion. The semiconductor device includes a silicon substrate, a gate formed on the silicon substrate with a gate insulation film in between, and a source and drain formed of conductive material layers buried in the substrate to a designated depth at opposite sides of the gate, thereby providing a source with no side diffusion, preventing reduction of channel length, and improving element integration.

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