Method for forming dielectric layer between gates in flash...

Details Method for forming dielectric layer between gates in flash... Method for forming dielectric layer between gates in flash...

2006-01-10

2006-01-10

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S258000, C438S593000

Reexamination Certificate

active

06984562

ABSTRACT:
The present invention provides a method for preventing an oxide film from becoming thick due to the reaction of the oxide film and a floating gate in a method for manufacturing a flash memory device having a dielectric layer consisting of at least one oxide film between the floating gate and a control gate. To this end, a Si—F bonding layer is formed on the surface of a silicon film constituting the floating gate. The Si—F bonding layer is annealed in a nitrogen gas atmosphere to form a Si—N bonding layer. A dielectric layer is then formed.

REFERENCES:
patent: 5571734 (1996-11-01), Tseng et al.

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