Mask ROM and the method of forming the same and the scheme...

Details Mask ROM and the method of forming the same and the scheme... Mask ROM and the method of forming the same and the scheme...

2006-04-18

2006-04-18

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S275000, C257S276000, C257S278000, C257S315000

Reexamination Certificate

active

07030448

ABSTRACT:
The structure of the nonvolatile memory includes a substrate having source/drain formed at unselected sides and source/drain with extension source/drain formed at other selected sides. A gate dielectric layer is formed on the substrate and a gate is formed on the gate dielectric layer. An isolation layer is formed along the surface of the gate. Spacers are formed attached on the sidewalls of the gate.

REFERENCES:
patent: 5486480 (1996-01-01), Chen
patent: 6468915 (2002-10-01), Liu
patent: 2002/0163039 (2002-11-01), Clevenger et al.

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