Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2006-07-04
2006-07-04
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S784000
Reexamination Certificate
active
07071575
ABSTRACT:
A semiconductor chip capable of implementing wire bonding over active circuits (BOAC) is provided. The semiconductor chip includes a bonding pad structure which includes a bondable metal pad, a top interconnection metal layer, a stress-buffering dielectric, and at least a first via plug between the bondable metal pad and the top interconnection metal layer. The semiconductor chip also includes at least an interconnection metal layer, at least a second via plug between the interconnection metal layer and the bonding pad structure, and an active circuit situated underneath the bonding pad structure on a semiconductor bottom.
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Chao Mei-Ling
Chen Shiao-Shien
Wang Kun-Chih
Wu Bing-Chang
Clark S. V.
Hsu Winston
United Microelectronics Corp.
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