Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Ghyka, Alexander (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000
Reexamination Certificate
active
07075134
ABSTRACT:
A three-dimensional (“3-D”) memory capacitor comprises a bottom electrode, a ferroelectric thin film, and a top electrode that conform to a 3-D surface of an insulator layer. The capacitance area is greater than the horizontal footprint area of the capacitor. Preferably, the footprint of the capacitor is less than 0.2 nm2, and the corresponding capacitance area is typically in a range of from 0.4 nm2to 1.0 nm2The ferroelectric thin film preferably has a thickness not exceeding 60 nm. A capacitor laminate including the bottom electrode, ferroelectric thin film, and the top electrode preferably has a thickness not exceeding 200 nm. A low-thermal-budget MOCVD method for depositing a ferroelectric thin film having a thickness in a range of from 30 nm to 90 nm includes an RTP treatment before depositing the top electrode and an RTP treatment after depositing the top electrode and etching the ferroelectric layer.
REFERENCES:
patent: 5046043 (1991-09-01), Miller et al.
patent: 5227855 (1993-07-01), Momose
patent: 5434102 (1995-07-01), Watanabe et al.
patent: 5466629 (1995-11-01), Mihara et al.
patent: 5468684 (1995-11-01), Yoshimori et al.
patent: 5519234 (1996-05-01), Paz de Araujo et al.
patent: 6110531 (2000-08-01), Paz de Araujo et al.
patent: 6180971 (2001-01-01), Maejima
patent: 6225656 (2001-05-01), Cuchiaro et al.
patent: 6245580 (2001-06-01), Solayappan et al.
patent: 6258733 (2001-07-01), Solayappan et al.
patent: 6326315 (2001-12-01), Uchiyama et al.
patent: 6506643 (2003-01-01), Hsu et al.
patent: 2003/0030079 (2003-02-01), Hsu et al.
patent: 2003/0129796 (2003-07-01), Bruchhaus et al.
patent: WO 93/12542 (1993-06-01), None
Joshi Vikram
McMillan Larry D.
Paz de Araujo Carlos A.
Solayappan Narayan
Ghyka Alexander
Patton & Boggs LLP
Symetrix Corporation
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