Dual double gate transistor and method for forming

Details Dual double gate transistor and method for forming Dual double gate transistor and method for forming

2006-09-05

2006-09-05

Flynn, Nathan J. (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S270000, C438S587000, C438S286000, C257S618000, C257S401000, C257S365000, C257S074000, C257SE21626

Reexamination Certificate

active

07101741

ABSTRACT:
The present invention provides a dual gate transistor and a method for forming the same that results in improved device performance and density. The present invention uses a double gate design to implement a dual gate transistor. A double gate is a gate which is formed on both sides of the transistor body. The present invention thus provides a transistor with two double gates in series that provide improved current control over traditional dual gate designs. The preferred embodiment of the present invention uses a fin type body with dual double-gates. In a fin type structure, the double gates are formed on each side of a thin fin shaped body, with the body being disposed horizontally between the gates.

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