Semiconductor device having a capping layer including cobalt...

Details Semiconductor device having a capping layer including cobalt... Semiconductor device having a capping layer including cobalt...

2006-05-02

2006-05-02

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S660000

Reexamination Certificate

active

07037828

ABSTRACT:
A semiconductor device, and a method of fabricating the same, includes cobalt as a capping layer. An interconnection structure of the semiconductor device has an improved via resistance. In the semiconductor device, a single cobalt layer or a composite film including a cobalt layer and a titanium nitride layer is used as the capping layer of a metal layer.

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