Method of forming a robust copper interconnect by dilute...

Details Method of forming a robust copper interconnect by dilute... Method of forming a robust copper interconnect by dilute...

2006-09-05

2006-09-05

Parker, Kenneth (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S658000, C438S660000, C438S687000, C251S315040

Reexamination Certificate

active

07101790

ABSTRACT:
A copper filled semiconductor feature and method of forming the same having improved bulk properties the method including providing a semiconductor process wafer having a process surface including an opening for forming a semiconductor feature; depositing at least one metal dopant containing layer over the opening to form a thermally diffusive relationship to a subsequently deposited copper layer; depositing said copper layer to substantially fill the opening; and, thermally treating the semiconductor process wafer for a time period sufficient to distribute at least a portion of the metal dopants to collect along at least a portion of the periphery of said copper layer including a portion of said copper layer grain boundaries.

REFERENCES:
patent: 6181012 (2001-01-01), Edelstein et al.
patent: 6258710 (2001-07-01), Rathore et al.
patent: 6368954 (2002-04-01), Lopatin et al.
patent: 6426293 (2002-07-01), Wang et al.
patent: 6479389 (2002-11-01), Tsai et al.
patent: 6806192 (2004-10-01), Lin et al.

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