Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-05-23
2006-05-23
Clark, Jasmine (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S701000, C257S702000, C257S703000, C257S705000, C257S706000, C257S707000, C257S708000, C257S709000, C257S712000, C257S713000, C257S717000, C257S720000, C438S122000, C438S502000, C361S688000, C361S701000, C361S702000, C361S703000
Reexamination Certificate
active
07049695
ABSTRACT:
A structure and method are provided for dissipating heat from a semiconductor device chip. A first layer of a dielectric material (e.g. polyimide) is formed on a front side of a heat spreader (typically Si). A plurality of openings are formed through this first layer; the openings are filled with metal (typically Cu), thereby forming metal studs extending through the first layer. A second layer of metal is formed on the backside of the device chip. The first layer and the second layer are then bonded in a bonding process, thereby forming a bonding layer where the metal studs contact the second layer. The bonding layer thus provides a thermal conducting path from the chip to the heat spreader.
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patent: 6477054 (2002-11-01), Hagerup
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patent: 2004/0238946 (2004-12-01), Tachibana et al.
patent: 5-82686 (1993-04-01), None
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Blecker Ira D.
Clark Jasmine
International Business Machines - Corporation
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