Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-30
2006-05-30
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S398000
Reexamination Certificate
active
07052957
ABSTRACT:
The invention provides robust and cost effective techniques to fabricate a semiconductor device having double-sided hemispherical silicon grain (HSG) electrodes for container capacitors. In an embodiment, this is accomplished by forming a layer of hemispherical silicon grain (HSG) polysilicon over interior surfaces of a container formed in a substrate. Any HSG polysilicon and barrier layers formed over the substrate and around the container opening during the forming of the HSG polysilicon and barrier layers are removed. An inside surface of the formed HSG polysilicon layer is nitridized to form a nitridation layer. A layer of cell nitride is deposited over the nitridation layer and the outside HSG polysilicon layer. A top electrode is formed over the deposited cell nitride layer.
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Geyer Scott B.
Lebentritt Michael
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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