Methods of producing integrated circuit devices utilizing...

Details Methods of producing integrated circuit devices utilizing... Methods of producing integrated circuit devices utilizing...

2006-07-25

2006-07-25

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S680000, C438S685000, C438S653000, C438S656000

Reexamination Certificate

active

07081409

ABSTRACT:
In a method for forming a gate electrode, a dielectric layer having a high dielectric constant is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3in which R1, R2and R3represent H or C1–C6alkyl group are introduced onto the dielectric layer to form a tantalum nitride layer. A capacitor metal layer or a gate metal layer is formed on the tantalum nitride layer. The capacitor metal layer or the gate metal layer and the tantalum nitride layer are patterned to form a capacitor electrode or a gate electrode. The tantalum amine derivatives are used in forming a dual gate electrode.

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